Modeling charge distribution on FinFET sidewalls
US9064976B1 · kind B1 · utility
2Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2014 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Dec 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A method is provided for modeling charge distribution on FinFET sidewalls for estimating variability in device performance. The method includes: inputting structure parameters and simulation parameters for a FinFET structure; identifying a semiconductor-oxide interface in the structure, the interface including a plurality of atomic steps and a plurality of trapped charges; distributing charges at the interface; and performing device simulations and current-voltage analysis upon generating all samples of given number of devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.