Titanium target for sputtering
US9068258B2 · kind B2 · utility
2Cited by
7References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2011 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | May 3, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target for sputtering, the purity of titanium is 99.995 mass % or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.