Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memory
US9070457B2 · kind B2 · utility
1Cited by
4References
12Claims
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Key dates
| Filing date | May 24, 2012 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Oct 13, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1114
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In magnetic tunnel junctions manufactured with use of a ferromagnetic material having perpendicular magnetic anisotropy, a difference in record retention time depending on stored information due to an imbalance in thermal stability between a parallel state and an anti-parallel state of magnetization, which correspond to bit information, is alleviated. A reference layer and a recording layer which constitute a magnetic tunnel junction are made different in area from each other so as to correct the difference in record retention time corresponding to stored information.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.