Removing method
US9070635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2013 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Aug 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A removing method including the following steps. A substrate is transferred into an etching machine, wherein the substrate has a material layer formed thereon. A cycle process is performed. The cycle process includes performing an etching process to remove a portion of the material layer, and performing an annealing process to remove a by-product generated by the etching process. The cycle process is repeated at least one time. The substrate is transferred out of the etching machine. In the removing method of the invention, the cycle process is performed multiple times to effectively remove the undesired thickness of the material layer and reduce the loading effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.