HEMT semiconductor device and a process of forming the same
US9070705B2 · kind B2 · utility
4Cited by
0References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 26, 2014 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Feb 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
Abstract
A HEMT semiconductor device can include a dielectric layer that includes a silicon nitride film and an AlN film. In an embodiment, the HEMT semiconductor device can include a GaN film and an AlGaN film. In a process of forming the HEMT device, the AlN can provide an etch stop when forming an opening for a gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.