Patent · US Active

Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy

US9074297B2 · kind B2 · utility

1Cited by

6References

19Claims

0Family size

Assignee

FREIBERGER COMPOUND MATERIALS GMBH · DE

Inventors

Gunnar Leibiger · Freiberg, DE
Frank Habel · Freiberg, DE
Stefan Eichler · Dresden, DE

Key dates

Filing date	Feb 29, 2008
Grant date	Jul 7, 2015
Priority date	—
Expiry date	May 11, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/24612
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A semiconductor compound material, preferably a III-N-bulk crystal or a III-N-layer, is manufactured in a reactor by means of hydride vapor phase epitaxy (HVPE), wherein in a mixture of carrier gases a flow profile represented by local mass flow rates is formed in the reactor. The mixture can carry one or more reaction gases towards a substrate. Thereby, a concentration of hydrogen important for the reaction and deposition of reaction gases is adjusted at the substrate surface independently from the flow profile simultaneously formed in the reactor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.