Methods of manufacturing embedded bipolar switching resistive memory
US9076523B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2012 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Jul 18, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Non linear current response circuits can be used in embedded resistive memory cell for reducing power consumption, together with improving reliability of the memory array. The non linear current response circuits can include two back to back leaky PIN diodes, two parallel anti-directional PIN diodes, two back to back Zener-type metal oxide diodes, or ovonic switching elements, along with current limiting resistor for standby power reduction at the low voltage region. Also, the proposed embedded ReRAM implementation methods based upon 1T2D1R scheme can be integrated into the advanced FEOL process technologies including vertical pillar transistor and/or 3D fin-shaped field effect transistor (FinFET) for realizing a highly compact cell density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.