Architecture for magnetic memories including magnetic tunneling junctions using spin-orbit interaction based switching
US9076541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2013 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Sep 18, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory includes memory array tiles (MATs), intermediate circuitry, global bit lines and global circuitry. Each MAT includes bit lines, word lines, and magnetic storage cells having magnetic junction(s), selection device(s) and at least part of a spin-orbit interaction (SO) active layer adjacent to the magnetic junction(s). The SO active layer exerts a SO torque on the magnetic junction(s) due to a preconditioning current passing through the SO active layer. The magnetic junction(s) are programmable using write current(s) driven through the magnetic junction(s) and the preconditioning current. The bit and word lines correspond to the magnetic storage cells. The intermediate circuitry controls read and write operations within the MATs. Each global bit line corresponds to a portion of the MATs. The global circuitry selects and drivesportions of the global bit lines for read operations and write operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.