HEMT structure with iron-doping-stop component and methods of forming

US9076812B2 · kind B2 · utility

Assignee

• IQE KC, LLC · US

Inventors

• Oleg Laboutin · South Easton, US
• Yu Cao · Craydon Court, US
• Wayne Johnson · Phoenix, US

Key dates

• Filing date: Jun 27, 2013
• Grant date: Jul 7, 2015
• Expiry date: Jun 27, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

An iron-doped high-electron-mobility transistor (HEMT) structure includes a substrate, a nucleation layer over the substrate, and a buffer layer over the nucleation layer. The gallium-nitride buffer layer includes a iron-doping-stop layer having a concentration of iron that drops from a juncture with an iron-doped component of the buffer layer over a thickness that is relatively small compared to that of the iron-doped component. The iron-doping-stop layer is formed at lower temperature compared to the temperature at which the iron-doped component is formed. The iron-doped HEMT structure also includes a channel layer over the buffer layer. A carrier-supplying barrier layer is formed over the channel layer.