Double layer transfer method

US9076841B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Frank Fournel · Meylan, FR
• Maxime Argoud · Grenoble, FR
• Jeremy Da Fonseca · Amilly, FR
• Hubert Moriceau · Saint-Égrève, FR

Key dates

• Filing date: Sep 20, 2012
• Grant date: Jul 7, 2015
• Expiry date: Sep 20, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of transferring a layer including: a) providing a layer joined to an initial substrate with a binding energy E0; b) bonding a front face of the layer on an intermediate substrate according to an intermediate bonding energy Ei; c) detaching the initial substrate from the layer; e) bonding a rear face onto a final substrate according to a final bonding energy Ef; and f) debonding the intermediate substrate from the layer to transfer the layer onto the final substrate; step b) comprising a step of forming siloxane bonds Si—O—Si, step c) being carried out in a first anhydrous atmosphere and step f) being carried out in a second wet atmosphere such that the intermediate bonding energy Ei takes a first value Ei1 in step c) and a second value Ei2 in step f), with Ei1>E0 and Ei2<Ef.