Gallium and nitrogen containing trilateral configuration for optical devices
US9076926B2 · kind B2 · utility
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28Claims
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Key dates
| Filing date | Feb 14, 2014 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Feb 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
Techniques for manufacturing optical devices, such as light emitting diodes (LEDs) using a separation process of thick gallium and nitrogen containing substrate members, are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.