Patent · US Active

Method for monitoring alignment between contact holes and polycrystalline silicon gate

US9080863B2 · kind B2 · utility

0Cited by

3References

6Claims

0Family size

Assignee

Shanghai Huali Microelectronics Corporation · CN

Inventors

Qiliang Ni · Shanghai, CN
Hunglin Chen · Shanghai, CN
Zhounan Wang · Shanghai, CN
Yin Long · Madison, US
Mingsheng Guo · Shanghai, CN

Key dates

Filing date	Dec 31, 2012
Grant date	Jul 14, 2015
Priority date	—
Expiry date	Apr 27, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/30
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention is related to the semiconductor manufacturing field, especially a method for monitoring alignment between contact holes and polycrystalline silicon gate by setting a plurality of equidistant contact holes with same sharp on poly-silicon and residual active area, and then obtain the process alignment profile of the quantized values in the plane in order to have a better control of process quality, thereby have a better control of the quality of the process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.