Patent · US Active

Structures comprising masks comprising carbon

US9082721B2 · kind B2 · utility

1Cited by

8References

12Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

David J. Keller · Syracuse, US
Alex J. Schrinsky · Boise, US

Key dates

Filing date	Feb 4, 2013
Grant date	Jul 14, 2015
Priority date	—
Expiry date	Feb 4, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/31144
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The critical dimension (CD) of features formed during the fabrication of a semiconductor device may be controlled through the use of a dry develop chemistry comprising O2, SO2 and a hydrogen halide. For example, a dry develop chemistry comprising a gas comprising O2 and a gas comprising SO2 and a gas comprising HBr may be used to remove exposed areas of a carbon-based mask. The addition of HBr to the conventional O2 and SO2 dry develop chemistry enables a user to tune the critical dimension by growing, trimming and/or sloping the sidewalls and to enhance sidewall passivation and reduce sidewall bowing.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.