Combinatorial method for solid source doping process development
US9082729B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Nov 20, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Mar 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One or more small spot showerhead apparatus are used to provide dopant exposure and/or to deposit materials using CVD, PECVD, ALD, or PEALD on small spots in a site isolated, combinatorial manner. The small spot showerheads may be configured within a larger combinatorial showerhead to allow multi-layer film stacks to be deposited in a combinatorial manner. Anneal processes where the area of the process can be controlled such as laser annealing or site-isolated rapid thermal processing (RTP) can be used to vary the annealing conditions in a combinatorial manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.