Method of making a semiconductor device including an all around gate

US9082788B2 · kind B2 · utility

Assignees

• STMICROELECTRONICS, INC. · US
• International Business Machines Corporation · US

Inventors

• Nicolas Loubet · Guilderland, US
• Prasanna Khare · Schenectady, US
• Huiming Bu · Millwood, US

Key dates

• Filing date: May 31, 2013
• Grant date: Jul 14, 2015
• Expiry date: Aug 1, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A method of making a semiconductor device includes forming an intermediate structure including second semiconductor fin portions above a first semiconductor layer, and top first semiconductor fin portions extending from respective ones of the second semiconductor fin portions. The second semiconductor fin portions are selectively etchable with respect to the top first semiconductor fin portions. A dummy gate is on the intermediate structure. The second semiconductor fin portions are selectively etched to define bottom openings under respective ones of the top first semiconductor fin portions. The bottom openings are filled with a dielectric material.