Method and apparatus for plasma dicing a semi-conductor wafer
US9082839B2 · kind B2 · utility
3Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2014 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Mar 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68327
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for plasma dicing a substrate. The method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a carrier support to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.