Group III nitride articles having nucleation layers, transitional layers, and bulk layers
US9082890B1 · kind B1 · utility
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46References
18Claims
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Key dates
| Filing date | Apr 4, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Jul 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.