Under ball metallurgy (UBM) for improved electromigration
US9084378B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Jul 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure that includes a substrate having an electrical component present therein, and a under-bump metallurgy (UBM) stack that is present in contact with a contact pad to the electrical component that is present in the substrate. The UBM stack includes a metallic adhesion layer that is direct contact with the contact pad to the electrical component, a copper (Cu) seed layer that is in direct contact with the metallic adhesion layer, a first nickel (Ni) barrier layer that is present in direct contact with copper (Cu) seed layer, and a layered structure of at least one copper (Cu) conductor layer and at least one second nickel (Ni) barrier layer present on the first nickel (Ni) barrier layer. A solder ball may be present on second nickel (Ni) barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.