Method and system for controlling a spike anneal process
US9085045B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2012 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | May 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method and system for controlling a spike anneal process on a substrate, comprising selecting one or more objectives, one or more absorbance layers, a technique of modifying absorption of the selected one or more absorbance layers, one or more wavelengths used in a heating device. A substrate modified with the selected technique of modifying absorption is provided. The spike anneal process is performed on the substrate using the selected heating device and selected spike anneal process variables. One or more of the spike anneal process variables, the selected technique of the modifying absorption, the selected one or more wavelengths, and/or the selected heating device are adjusted in order to meet the one or more objectives of the spike anneal process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.