Method for predicting reliable lifetime of SOI mosfet device
US9086448B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2011 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Jun 8, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/287
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for predicting a reliable lifetime of a SOI MOSFET device including: measuring a relationship of a gate resistance of the device varying as a function of a temperature at different wafer temperatures; performing a lifetime accelerating test on the device at different wafer temperatures, so as to obtain a degenerating relationship of a parameter representing the lifetime of the device as a function of stress time, and obtain a lifetime in the presence of self-heating when the parameter degenerates to 10%; performing a self-heating correction on the measured lifetime of the device by using the measured self-heating temperature and an Arrhenius model, so as to obtain a lifetime without self-heating influence; performing a self-heating correction on a variation of the drain current caused by self-heating; performing a self-heating correction on an impact ionization rate caused by hot carriers; and predicting the lifetime of the device under a bias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.