Patent · US Active

EUV resist sensitivity reduction

US9086631B2 · kind B2 · utility

1Cited by
5References
19Claims
0Family size

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Inventors

Key dates

Filing dateApr 17, 2013
Grant dateJul 21, 2015
Priority date—
Expiry dateAug 23, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/405
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method for patterning a substrate is described. The method includes forming a layer of radiation-sensitive material on a substrate, and preparing a pattern in the layer of radiation-sensitive material using a lithographic process, wherein the pattern is characterized by a critical dimension (CD) and a roughness. Following the preparation of the pattern in the layer of radiation-sensitive material, the method further includes performing a CD slimming process to reduce the CD to a reduced CD, and performing a vapor smoothing process to reduce the roughness to a reduced roughness.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.