Semiconductor device and method of embedding TSV semiconductor die within substrate for vertical interconnect in POP
US9087701B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2011 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Jun 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a substrate with a first conductive layer over a surface of the substrate and a plurality of cavities exposing the first conductive layer. A first semiconductor die having conductive TSV is mounted into the cavities of the substrate. A first insulating layer is formed over the substrate and first semiconductor die and extends into the cavities to embed the first semiconductor die within the substrate. A portion of the first insulating layer is removed to expose the conductive TSV. A second conductive layer is formed over the conductive TSV. A portion of the first conductive layer is removed to form electrically common or electrically isolated conductive segments of the first conductive layer. A second insulating layer is formed over the substrate and conductive segments of the first conductive layer. A second semiconductor die is mounted over the substrate electrically connected to the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.