Methods of forming charge storage structures including etching diffused regions to form recesses
US9087737B2 · kind B2 · utility
0Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2014 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Aug 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.