High-purity copper-manganese-alloy sputtering target
US9090970B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2012 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Sep 6, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC22F1/00
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt % of Mn and the remainder being Cu and inevitable impurities. The high-purity copper-manganese-alloy sputtering target is characterized in that the in-plane variation (CV value) in Mn concentration of the target is 3% or less. It is thus possible to form a thin film having excellent uniformity by adding an appropriate amount of a Mn element to copper and reducing the in-plane variation of the sputtering target. In particular, there is provided a high-purity copper-manganese-alloy sputtering target which is useful for improving the yield and the reliability of semiconductor products which are making progress in a degree of refinement and integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.