Contrast enhancing exposure system and method for use in semiconductor fabrication
US9091923B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2007 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Nov 24, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70475
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Contrast enhancing exposure apparatus and method for use in semiconductor fabrication are described. In one embodiment, a method for forming a pattern on a substrate, wherein the substrate includes a photoresist layer comprising photoacid generators (“PAGs”) and photobase generators (“PBGs”), is described. The method includes dividing the pattern into two component patterns; exposing the photoresist layer of the substrate to UV light through a first mask corresponding to a first one of the component patterns; subsequent to the exposing the photoresist layer of the substrate to UV light through the first mask, exposing the photoresist layer of the substrate to UV light through a second mask corresponding to a second one of the component patterns, wherein the PAGs and PBGs disposed in areas of the photoresist layer that have been exposed to UV light at least twice are activated and wherein the activated PAGs neutralize the activated PBGs in areas of the photoresist layer that have been exposed to UV light at least twice.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.