Methods and apparatus for forming silicon passivation layers on germanium or III-V semiconductor devices
US9093264B2 · kind B2 · utility
1Cited by
3References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 18, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Apr 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described are apparatus and methods for forming silicon interfacial layers on germanium or III-V materials. Such silicon layers may be deposited by atomic layer deposition at specific temperatures to avoid interdiffusion of silicon and the germanium or III-V material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.