Method for manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method
US9093271B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 28, 2012 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Jun 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for manufacturing, by means of epitaxy, a monocrystalline layer of GaN on a substrate, wherein the coefficient of thermal expansion is less than the coefficient of thermal expansion of GaN, comprising the following steps: (b) three-dimensional epitaxial growth of a layer of GaN relaxed at the epitaxial temperature, (c1) growth of an intermediate layer of BwAlxGayInzN, (c2) growth of a layer of BwAlxGayInzN, (c3) growth of an intermediate layer of BwAlxGayInzN, at least one of the layers formed in steps (c1) to (c3) being an at least ternary III-N alloy comprising aluminium and gallium, (d) growth of said layer of GaN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.