Method for fabricating metal-oxide semiconductor transistor
US9093473B2 · kind B2 · utility
2Cited by
27References
10Claims
0Family size
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Key dates
| Filing date | Jul 15, 2014 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Jul 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0223
Abstract
A method for fabricating a metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a silicon layer on the semiconductor substrate; performing a first photo-etching process on the silicon layer for forming a gate pattern; forming an epitaxial layer in the semiconductor substrate adjacent to two sides of the gate pattern; and performing a second photo-etching process on the gate pattern to form a slot in the gate pattern while using the gate pattern to physically separate the gate pattern into two gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.