Method and structure to reduce FET threshold voltage shift due to oxygen diffusion
US9093495B2 · kind B2 · utility
3Cited by
8References
18Claims
0Family size
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Key dates
| Filing date | Jan 3, 2012 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Mar 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/721
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work function and switching threshold shift in transistors including such Hi-K materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.