Patent · US Active

Semiconductor constructions, methods of forming conductive structures and methods of forming DRAM cells

US9099472B2 · kind B2 · utility

0Cited by
4References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 25, 2013
Grant dateAug 4, 2015
Priority date—
Expiry dateNov 22, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Some embodiments include methods of forming conductive structures. An electrically conductive material may be deposited with a first deposition method. The first deposition method has a first deposition rate and forms a first portion of a conductive structure. A second portion of the conductive structure may be formed by depositing the electrically conductive material with a second deposition method having a second deposition rate. The second deposition rate may be different from the first deposition rate by at least about a factor of 3. In some embodiments, a region of the conductive structure is utilized as a transistor gate of a DRAM cell. Some embodiments include semiconductor constructions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.