Method for the formation of dielectric isolated fin structures for use, for example, in FinFET devices
US9099570B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2013 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Jan 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a substrate formed of a first semiconductor material, a first overlying layer formed of a second semiconductor material is deposited. A second overlying layer formed of a third semiconductor material is deposited over the first overlying layer. The first and second overlying layers are patterned to define fins, wherein each fin includes a first region formed of the third material over a second region formed of the second material. An oxide material fills the space between the fins. A thermal oxidation is then performed to convert the second region to a material insulating the first region formed of the third material from the substrate. As an optional step, the second region formed of the second material is horizontally thinned before the oxide material is deposited and the thermal oxidation is performed. Once the fins are formed and insulated from the substrate, conventional FinFET fabrication is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.