Apparatus and method for target thickness and surface profile uniformity control of multi-head chemical mechanical polishing process
US9102033B2 · kind B2 · utility
4Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 24, 2010 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Dec 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.