Substrates and methods of forming a pattern on a substrate
US9102121B2 · kind B2 · utility
0Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2012 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Jul 27, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24612
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.