Michael Hyatt
24Patents
3h-index
18Co-inventors
52Inventor score
Filing activity: Mar 2, 2010 → Aug 24, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8486611B2 | Semiconductor constructions and methods of forming patterns | Electricity | 6 | Active |
| US8815497B2 | Semiconductor constructions and methods of forming patterns | Electricity | 3 | Active |
| US9213239B2 | Methods of forming patterns for semiconductor device structures | Electricity | 3 | Active |
| US9583381B2 | Methods for forming semiconductor devices and semiconductor device structures | Electricity | 2 | Active |
| US8440371B2 | Imaging devices, methods of forming same, and methods of forming semiconductor device structures | Emerging Cross-Sectional Technologies | 2 | Active |
| US9330914B2 | Methods of forming line patterns in substrates | Electricity | 2 | Active |
| US8969214B2 | Methods of forming a pattern on a substrate | Electricity | 2 | Active |
| US8625078B2 | Illumination design for lens heating mitigation | Physics | 1 | Active |
| US8153522B2 | Patterning mask and method of formation of mask using step double patterning | Electricity | 1 | Active |
| US9780029B2 | Semiconductor constructions having conductive lines which merge with one another | Electricity | 1 | Active |
| US8883372B2 | Reticle with composite polarizer and method of simultaneous optimization of imaging of a set of different patterns | Physics | 1 | Active |
| US8507191B2 | Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same | Emerging Cross-Sectional Technologies | 1 | Active |
| US9235134B2 | Lens heating compensation in photolithography | Physics | 0 | Active |
| US9465287B2 | Methods of forming patterns for semiconductor device structures | Electricity | 0 | Active |
| US8845908B2 | Reticles, and methods of mitigating asymmetric lens heating in photolithography | Physics | 0 | Active |
| US9140977B2 | Imaging devices, methods of forming same, and methods of forming semiconductor device structures | Emerging Cross-Sectional Technologies | 0 | Active |
| US8871407B2 | Patterning mask and method of formation of mask using step double patterning | Electricity | 0 | Active |
| US9358753B2 | Substrates and methods of forming a pattern on a substrate | Emerging Cross-Sectional Technologies | 0 | Active |
| US10217706B2 | Semiconductor constructions | Electricity | 0 | Active |
| US8685630B2 | Methods of forming a pattern in a material and methods of forming openings in a material to be patterned | Electricity | 0 | Active |
| US9102121B2 | Substrates and methods of forming a pattern on a substrate | Emerging Cross-Sectional Technologies | 0 | Active |
| US9048292B2 | Patterning methods and methods of forming electrically conductive lines | Electricity | 0 | Active |
| US8512938B2 | Methods of forming a pattern in a material and methods of forming openings in a material to be patterned | Electricity | 0 | Active |
| US8728721B2 | Methods of processing substrates | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.