Method and system for improving critical dimension uniformity using shaped beam lithography
US9104109B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2013 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Nov 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31776
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a pattern on a surface using charged particle beam lithography is disclosed, where the shots in an ordered set of input shots are modified within a subfield to reduce either a thermal variation or a maximum temperature of the surface during exposure by the charged particle beam writer. A method for fracturing or mask data processing is also disclosed, where an ordered set of shots is generated which will expose at least one subfield of a surface using a shaped beam charged particle beam writer, and where a temperature or a thermal variation generated on the surface during the exposure of one subfield is calculated. Additionally, a method for forming a pattern on a surface with an ordered set of shots using charged particle beam lithography is disclosed, in which a blanking period following a shot is lengthened to reduce the maximum temperature of the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.