Imaging and processing for plasma ion source
US9105438B2 · kind B2 · utility
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21References
20Claims
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Key dates
| Filing date | May 10, 2013 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | May 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31749
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.