Super junction semiconductor device

US9105487B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Johannes Georg Laven · Taufkirchen, DE
• Dieter Fuchs · Simmerath, DE
• Werner Schustereder · Villach, AT
• Roman Knoefler · Villach, AT

Key dates

• Filing date: Feb 25, 2014
• Grant date: Aug 11, 2015
• Expiry date: Feb 25, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A super junction semiconductor device includes a substrate layer of a first conductivity type and an epitaxial layer adjoining the substrate layer and including first columns of the first conductivity type and second columns of a second conductivity type. The first and second columns extend along a main crystal direction into the epitaxial layer and have vertical dopant profiles perpendicular to the first surface. The vertical dopant profile of at least one of the first and second columns includes first portions separated by second portions. In each of the first portions a dopant concentration varies by at most 30% of a maximum value within the respective first portion. In the second portions the dopant concentration is lower than in the adjoining first portions. A ratio of a total length of the first portions to a total length of the first and second portions is at least 50%.