Etching method
US9105585B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2014 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Apr 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3346
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method can selectively etch a second region formed of silicon oxide in a target object with respect to a first region formed of silicon in the target object. The etching method includes (a) processing the target object with plasma of a first processing gas containing fluorocarbon and fluorohydrocarbon by generating the plasma of the first processing gas with a microwave, and (b) after the processing of the target object with the plasma of the first processing gas, processing the target object with plasma of a second processing gas containing fluorocarbon by generating the plasma of the second processing gas with the microwave.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.