Methods of forming semiconductor structures with sulfur dioxide etch chemistries
US9105587B2 · kind B2 · utility
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24Claims
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Key dates
| Filing date | Nov 8, 2012 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Nov 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a semiconductor device structure and sulfur dioxide etch chemistries. The methods and chemistries, which may be plasma chemistries, include use of sulfur dioxide and a halogen-based compound to form a trimmed pattern of a patterning material, such as a resist material, at a critical dimension with low feature width roughness, with low space width roughness, without excessive height loss, and without substantial irregularities in the elevational profile, as compared to trimmed features formed using conventional chemistries and trimming methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.