Patent · US Active

Method for producing thin semiconductor components

US9105645B2 · kind B2 · utility

0Cited by
2References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 18, 2012
Grant dateAug 11, 2015
Priority date
Expiry dateSep 18, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor substrate (1) is provided with a structure (3) on an upper side (2), and an additional substrate (4) provided for handling the semiconductor substrate is likewise structured on an upper side (5). The structuring of the additional substrate takes place in at least partial correspondence with the structure of the semiconductor substrate. The structured upper sides of the semiconductor substrate and the additional substrate are positioned such that they face one another and are permanently connected to one another. Subsequently, the semiconductor substrate is thinned from the rear side (6), and the additional substrate is removed at least to such a degree that the structure of the semiconductor substrate is exposed to the extent required for the further use.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.