Semiconductor device and insulated gate bipolar transistor with barrier regions

US9105679B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Georg Laven · Taufkirchen, DE
• Roman Baburske · Otterfing, DE
• Christian Jaeger · Munich, DE

Key dates

• Filing date: Nov 27, 2013
• Grant date: Aug 11, 2015
• Expiry date: Jan 2, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

In a semiconductor device a barrier region is sandwiched between a drift region and a charge carrier transfer region. The barrier and charge carrier transfer regions form a pn junction. The barrier and drift regions form a homojunction. A mean impurity concentration in the barrier region is at least ten times as high as an impurity concentration in the drift region. A control structure is arranged to form an inversion layer in the drift and barrier regions in an inversion state. No inversion layer is formed in the drift and barrier regions in a non-inversion state.