Method and apparatus for detecting relationship between thermal and electrical properties of semiconductor device
US9110125B2 · kind B2 · utility
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5References
12Claims
0Family size
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Key dates
| Filing date | Sep 27, 2012 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Jul 11, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/3004
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for detecting a semiconductor device property is provided. First, a semiconductor device is provided. Thereafter, a detecting current is applied and the semiconductor device is heated, and temperatures and voltages of the semiconductor device are measured, so as to establish a relationship between the temperatures and the voltages of the semiconductor device. Accordingly, a temperature sensitive parameter (TSP) is calculated. An apparatus for detecting a semiconductor device property is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.