Smart charge pump configuration for non-volatile memories
US9111629B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2012 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | May 7, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3454
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a non-volatile memory, a memory controller, and a charge pump system. The memory controller establishes first parameters for a first programming cycle of a first plurality of memory cells of the non-volatile memory prior to the first programming cycle being performed. The charge pump system includes a plurality of charge pumps and provides a first programming pulse for use in performing the first program cycle. The first programming pulse is provided by selecting, according to the first parameters, which of the plurality of charge pumps are to be enabled during the first program cycle and which are to be disabled during the first program cycle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.