Patent · US Active

Plasma processing apparatus

US9111726B2 · kind B2 · utility

1Cited by
2References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 24, 2012
Grant dateAug 18, 2015
Priority date
Expiry dateApr 5, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/3244
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.