Patent · US Active

Plasma ignition performance for low pressure physical vapor deposition (PVD) processes

US9111733B2 · kind B2 · utility

1Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 31, 2009
Grant dateAug 18, 2015
Priority date
Expiry dateOct 10, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/3444
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A plasma ignition system includes a first voltage supply that selectively supplies a plasma ignition voltage and a plasma maintenance voltage across an adapter ring and a cathode target of a physical vapor deposition (PVD) system. A second voltage supply selectively supplies a second voltage across the adapter ring and an anode ring of the PVD system. A plasma ignition control module ignites plasma using the plasma ignition voltage and the auxiliary plasma ignition voltage and, after the plasma ignites, supplies the plasma maintenance voltage and ceases supplying the plasma ignition voltage and the auxiliary plasma ignition voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.