Method for fabricating a phase-change memory cell

US9111856B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Fabio Pellizzer · Boise, US
• Michele Magistretti · Gessate, IT
• Cristina Casellato · Vimercate, IT
• Monica Vigilante · Pessano, IT

Key dates

• Filing date: Dec 30, 2008
• Grant date: Aug 18, 2015
• Expiry date: Jun 17, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer (228) on a metal layer (226) above a substrate. A phase-change material layer (230) is formed on the dielectric layer. A contact region (232) is formed, within the dielectric layer, between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer.