Cristina Casellato
12Patents
4h-index
15Co-inventors
53Inventor score
Filing activity: Dec 30, 2008 → Oct 13, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8623697B2 | Avoiding degradation of chalcogenide material during definition of multilayer stack structure | Electricity | 20 | Active |
| US9748311B2 | Cross-point memory and methods for fabrication of same | Electricity | 19 | Active |
| US9806129B2 | Cross-point memory and methods for fabrication of same | Electricity | 11 | Active |
| US10854674B2 | Cross-point memory and methods for fabrication of same | Electricity | 6 | Active |
| US9111856B2 | Method for fabricating a phase-change memory cell | Electricity | 4 | Active |
| US10396125B2 | Cross-point memory and methods for fabrication of same | Electricity | 2 | Active |
| US8293598B2 | Process for manufacturing a memory device including a vertical bipolar junction transistor and a CMOS transistor with spacers | Electricity | 1 | Active |
| US11600665B2 | Cross-point memory and methods for fabrication of same | Electricity | 0 | Active |
| US9570681B2 | Resistive random access memory | Electricity | 0 | Active |
| US11271042B2 | Via resistance reduction | Electricity | 0 | Active |
| US10680037B2 | Cross-point memory and methods for fabrication of same | Electricity | 0 | Active |
| US8860223B1 | Resistive random access memory | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.