Ion implantation system and method
US9111860B2 · kind B2 · utility
3Cited by
20References
21Claims
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Key dates
| Filing date | Aug 5, 2014 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Aug 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.