Method for producing a semiconductor device including a dielectric layer

US9112053B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Hans Weber · Villach, AT
• Franz Hirler · Isen, DE
• Andreas Meiser · Unterhaching, DE
• Anton Mauder · Kolbermoor, DE
• Kurt Sorschag · Villach, AT
• Stefan Gamerith · Villach, AT
• Roman Knoefler · Villach, AT

Key dates

• Filing date: Jun 29, 2012
• Grant date: Aug 18, 2015
• Expiry date: Feb 2, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A semiconductor device with a dielectric layer is produced by providing a semiconductor body with a first trench extending into the semiconductor body, the first trench having a bottom and a sidewall. A first dielectric layer is formed on the sidewall in a lower portion of the first trench and a first plug is formed in the lower portion of the first trench so as to cover the first dielectric layer. The first plug leaves an upper portion of the sidewall uncovered. A sacrificial layer is formed on the sidewall in the upper portion of the first trench and a second plug is formed in the upper portion of the first trench. The sacrificial layer is removed so as to form a second trench having sidewalls and a bottom. A second dielectric layer is formed in the second trench and extends to the first dielectric layer.