Rectified switching of two-terminal memory via real time filament formation

US9112145B1 · kind B1 · utility

Assignee

• CrossBar, Inc. · US

Inventors

• Wei Lu · Ann Arbor, US
• Sung Hyun Jo · Sunnyvale, US

Key dates

• Filing date: Jan 31, 2013
• Grant date: Aug 18, 2015
• Expiry date: Jan 31, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

Providing for rectified-switching of a two-terminal solid state memory cell is described herein. By way of example, the subject disclosure provides a solid state device exhibiting rectified resistive switching characteristics that can be fabricated with semiconductor fabrication techniques. The solid state device can comprise a metal ion layer adjacent to an electrically resistive diffusion layer, which is at least in part permeable to conductive ions of the metal ion layer. A pair of electrodes can be placed, respectively, on opposite sides of the adjacent ion layer and electrically resistive diffusion layer to facilitate operating on the two-terminal solid state memory cell. In operation, a program voltage induces conductive ions to form a semi-stable conductive filament within the diffusion layer, which partially deforms in response to reduction in the program voltage. A suitable rectifier voltage re-establishes electrical conductivity, with much lower electrical conductivity for voltages lower than the rectifier voltage.